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| 2SJ244 Silicon P Channel MOS FET REJ03G0853-0200 (Previous: ADE-208-1187) Rev.2.00 Sep 07, 2005 Description High speed power switching Low voltage operation Features * Very Low on-resistance * High speed switching * Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) D 3 2 1 G 4 1. Gate 2. Drain 3. Source 4. Drain S Note: Marking is "JY". *UPAK is a trademark of Renesas Technology Corp. Rev.2.00 Sep 07, 2005 page 1 of 6 2SJ244 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note 2 Pch Tch Tstg Note 1 Value -12 7 2 4 1 150 -55 to +150 Unit V V A A W C C Notes: 1. PW 100 s, duty cycle 10% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-off delay time Body to drain diode forward voltage Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) 1 RDS (on) 2 |yfs| Ciss Coss Crss td (on) td (off) VDF Min -12 7 -- -- -0.4 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.65 0.5 1.8 100 168 35 365 1450 -- Max -- -- 5 -1 -1.4 0.9 -- -- -- -- -- -- -- 7 Unit V V A A V S pF pF pF ns ns V Test Conditions ID = -1 mA, VGS = 0 IG = 10 A, VDS = 0 VGS = 6 V, VDS = 0 VDS = -8 V, VGS = 0 ID = -100 A, VDS = -5 V Note 3 ID = -0.5 A, VGS = -2.5 V ID = -1 A, VGS = -4 V Note 3 ID = -1 A, VDS = -5 V VDS = -5 V VGS = 0 f = 1 MHz ID = -0.2 A Vin = -4 V, RL = 51 IF = 4 A Note 3 Note 3 Note 3 , VGS = 0 Rev.2.00 Sep 07, 2005 page 2 of 6 2SJ244 Main Characteristics Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (W) (on the alumina ceramic board) 2.0 -10 PW = 1 ms (1 shot) Maximum Safe Operation Area 1.5 ID (A) -3 -1 -0.3 -0.1 -0.03 Operation in this area is limited by RDS (on) -1 -3 DC n tio ra pe O 1.0 Drain Current a (T = ) C 25 0.5 0 0 50 100 150 200 -0.01 -0.1 -0.3 -10 -30 -100 Ambient Temperature Ta (C) Drain to Source Voltage VDS (V) (on the alumina ceramic board) Typical Forward Transfer Characteristics -5 Tc = -25C 25C 75C Typical Output Characteristics -5 -5 V -4.5 V -4 V -3.5 V ID (A) -4 -3 V -3 ID (A) Drain Current Pulse Test -4 -3 -2.5 V Drain Current -2 -2 V -1 VGS = -1.5 V 0 0 -2 -4 -6 -8 -10 -2 -1 VDS = -5 V Pulse Test 0 0 -1 -2 -3 -4 -5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS (on) () 20 10 5 25C 2 1 0.5 VDS = -5 V Pulse Test 0.2 -0.1 -0.2 -0.5 -1 -2 -5 -10 75C Tc = -25C 10 Drain to Source on State Resistance vs. Drain Current Pulse Test 5 2 1 0.5 -2 V -3 V VGS = -4 V 0.2 0.1 -0.1 -0.2 -0.5 -1 -2 -5 10 Drain Current ID (A) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 2SJ244 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test -0.8 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source on State Resistance vs. Temperature Drain to Source on State Resistance RDS (on) () 1.0 ID = -1 A 0.8 VGS = -2.5 V -0.5 A 0.6 -0.5 A ID = -1 A VGS = -4 V -1.0 -0.6 ID = -1 A -0.4 -0.5 A -0.2 A -0.1 A 0.4 -0.2 0.2 Pulse Test 0 -25 0 25 50 75 100 0 0 -1 -2 -3 -4 -5 Gate to Source Voltage VGS (V) Case Temperature Tc (C) Body-Drain Diode Reverse Recovery Time 2000 2000 1000 500 Switching Time vs. Drain Current Reverse Recovery Time trr (ns) Switching Time t (ns) 1000 500 td(off) tf tr 200 100 50 di / dt = 10 A / s PW = 10 s 20 -0.1 -0.2 -0.5 -1 -2 -5 -10 200 100 50 VGS = -4 V, VDD = -10 V PW = 2 s, Duty Cycle = 1 % 20 -0.1 -0.2 -0.5 -1 -2 -5 -10 td(on) Reverse Drain Current IDR (A) Drain Current ID (A) Dynamic Input Characteristics VDS (V) ID = -4 A Pulse Test -20 -5 V VDD = -10 V -8 Typical Capacitance vs. Drain to Source Voltage VGS (V) -10 1000 500 Coss -25 Drain to Source Voltage Gate to Source Voltage Capacitance C (pF) -15 VDS -10 VGS -6 200 100 50 Ciss -4 VDD = -10 V Crss VGS = 0 f = 1 MHz -0.5 -1 -2 -5 -10 -5 -5 V -2 20 10 -0.1 -0.2 0 0 2 4 6 8 10 0 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Rev.2.00 Sep 07, 2005 page 4 of 6 2SJ244 Reverse Drain Current vs. Source to Drain Voltage -4 Reverse Drain Current IDR (A) Pulse Test -3 -4 V -2 -2.5 V -1 VGS = 0 0 0 -0.5 -1.0 -1.5 -2.0 Source to Drain Voltage VSD (V) Rev.2.00 Sep 07, 2005 page 5 of 6 2SJ244 Package Dimensions JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 0.1 0.4 1.8 Max 1 1.5 0.1 0.44 Max (1.5) 2.5 0.1 4.25 Max 1.5 1.5 3.0 Ordering Information Part Name 2SJ244JYTL-E 2SJ244JYTR-E 1000 pcs 1000 pcs Quantity Taping Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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